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BCR40RM-12LB Datasheet Thyristor

Manufacturer: Inchange Semiconductor

Overview: isc Thyristors BCR40RM-12LB.

General Description

·With TO-3PML packaging ·High operating junction temperature ·Very high commutation performance maximized at each gate sensitivity ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High temperature, high power motor control ·Solid state relays;heating and cooking appliances ·Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM IT(RMS) Repetitive peak reverse voltage RMS on-state current @Tc=118℃ ITSM Surge non-repetitive on-state current 50HZ PG(AV) Average gate power dissipation ( over any 20 ms period ) Tj Operating junction temperature Tstg Storage temperature MIN UNIT 600 V 600 V 40 A 400 A 0.5 W -40~150 ℃ -40~150 ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT IRRM IDRM Repetitive peak reverse current Repetitive peak off-state current VR=VRRM Rated;

VD=VDRM Rated;

Tj=125℃ 10 mA VTM On-state voltage IGT Gate-trigger current VGT Gate-trigger voltage IT=60A,tP=380μs Ⅰ VD =6V;RL=6Ω;RG=330Ω Ⅱ Ⅲ VD =6V;RL=6Ω;RG=330Ω 1.55 V 50 50 mA 50 2.5 V isc Thyristors isc website:www.iscsemi.com BCR30AM-12LB isc & iscsemi is registered trademark NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.

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