Datasheet Details
| Part number | BCR8PM-14LG |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 154.17 KB |
| Description | Thyristor |
| Datasheet | BCR8PM-14LG-INCHANGE.pdf |
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Overview: isc Thyristors INCHANGE Semiconductor BCR8PM-14LG.
| Part number | BCR8PM-14LG |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 154.17 KB |
| Description | Thyristor |
| Datasheet | BCR8PM-14LG-INCHANGE.pdf |
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·With TO-220F packaging ·Operating in 3 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Solid state relays;heating and cooking appliances ·Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage Tj=150℃ VRRM Repetitive peak reverse voltage IT(AV) Average on-state current MAX UNIT 700 V 700 V 8 A ITSM Surge non-repetitive on-state current 60HZ 80 A PG(AV) Average gate power dissipation ( over any 20 ms period ) Tj Operating junction temperature Tstg Storage temperature 0.5 W -40~150 ℃ -40~150 ℃ isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors INCHANGE Semiconductor BCR8PM-14LG ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT IRRM Repetitive peak reverse current VR=VRRM Rated;
IDRM Repetitive peak off-state current VD=VDRM Rated;
Tj=150℃ 2.0 mA VTM On-state voltage IGT Gate-trigger current VGT Rth (j-c) Gate-trigger voltage Junction to case IT=12A Ⅰ VD =6V;RL=6Ω;RG=330Ω Ⅱ Ⅲ VD =6V;RL=6Ω;RG=330Ω Half cycle 1.6 V 30 30 mA 30 1.5 V 4.3 ℃/W NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
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BCR8PM-14LG | Triac | Renesas Technology |
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