Inchange Semiconductor BD107
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | BD107 |
|---|---|
| Datasheet | BD107 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Breakdown Voltage- : V(BR)CEO= 65V(Min)●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for driver and output stages and high Power switchingABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 65 V VCEO Collector-Emitter Voltage 65 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2.5 A 12 W 175 ℃ Tstg Storage Temperature Range -55~175 ℃ BD107 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(SUS) Collector-Emitter Saturation Voltage IC= 10mA ; IB= 0 VCE(SAT) Base-Emitter Saturation Voltage IC= 2.5A; VCE= 0.25A ICBO Collector Cutoff Current VCB= 60V; IE= 0 IEBO Emitter Cutoff Current VEB=5V; IC= 0 hFE-1 DC Current Gain IC= 0.5A; VCE= 2V hFE-2 DC Current Gain IC= 1A ; VCE= 2V● hFE-1 Classifications A B 50-150 100-300 BD107 MIN TYP.
