Inchange Semiconductor BD138
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | BD138 |
|---|---|
| Datasheet | BD138 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | PNP Transistor |
| Buy | Stock & Price |
DESCRIPTION
●DC Current Gain- : hFE= 40(Min)@ IC= -0.15A●Collector-Emitter Sustaining Voltage - : VCEO(SUS)= -60V(Min)
●Complement to type BD137
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC IB PC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @ Ta=25℃ Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range -60 V -60 V -5 V -1.5 A -0.5 A 1.25 W 12.5 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 10 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 100 ℃/W BD138 isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTR...