Inchange Semiconductor BD157
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | BD157 |
|---|---|
| Datasheet | BD157 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 250V(Min)●DC Current Gain- : hFE = 30~240(Min) @ IC= 50mA
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for power output stages for television, radio, phonograph and other consumer product applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 275 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.5 A ICM Collector Current-Peak 1.0 A IB Base Current-Continuous PC Collector Power Dissipation TC=25℃ Ti Junction Temperature 0.25 A 20 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 6.25 ℃/W isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS)...