BD162 - NPN Transistor

Inchange Semiconductor

General Description

Continuous Collector Current -IC= 4A Excellent Safe Operating Area Good Linearity of hFE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

applications.

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BD162 npn transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	BD162
Manufacturer	Inchange Semiconductor
File Size	180.56 KB
Description	NPN Transistor
Datasheet	BD162 Datasheet

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isc Silicon NPN Power Transistor INCHANGE Semiconductor BD162 DESCRIPTION ·Continuous Collector Current -IC= 4A ·Excellent Safe Operating Area ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4 A IB Base Current-Continuous 2 A PC Collector Power Dissipation@TC=25℃ 15 W TJ Junction Temperature 175 ℃ Tstg Storage Temperature -65~175 ℃ isc website：www.iscsemi.