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BD202F - PNP Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO = -45V(Min)- BD202F -60V(Min)- BD204F Complement to Type BD201F/203F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in hi-fi equipment delivering an output of 15 to

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -45V(Min)- BD202F -60V(Min)- BD204F ·Complement to Type BD201F/203F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in hi-fi equipment delivering an output of 15 to 15 W into a 4Ωor 8Ωload.