BD227 - PNP Transistor

Inchange Semiconductor

General Description

DC Current Gain- : hFE= 40(Min)@ IC= -0.15A Complement to Type BD226/228/230 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for use in driver stages in television circuits.

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BD227 pnp transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	BD227
Manufacturer	Inchange Semiconductor
File Size	206.33 KB
Description	PNP Transistor
Datasheet	BD227 Datasheet

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Other Datasheets by Inchange Semiconductor

Part Number	Description
BD224	PNP Transistor
BD226	Silicon NPN Power Transistor
BD228	Silicon NPN Power Transistor
BD229	PNP Transistor
BD201F	NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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isc Silicon PNP Power Transistor DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= -0.15A ·Complement to Type BD226/228/230 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in driver stages in television circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BD227 -45 VCBO Collector-Base Voltage BD229 -60 BD231 -100 BD227 -45 VCEO Collector-Emitter Voltage BD229 -60 BD231 -80 VCER Collector-Emitter Voltage(RBE= 1kΩ) BD227 BD229 BD231 -45 -60 -100 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -1.5 ICM Collector Current-Peak PC Collector Power Dissipation @ TC≤62℃ TJ Junction Temperature -3.0 12.