Inchange Semiconductor BD238
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | BD238 |
|---|---|
| Datasheet | BD238 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon PNP Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●DC Current Gain- : hFE= 40(Min)@ IC= -0.15A●Complement to Type BD233/235/237
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for use in 5~10 watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD234 -45 VCBO Collector-Base Voltage BD236 -60 V BD238 -100 BD234 -45 VCEO Collector-Emitter Voltage BD236 -60 V BD238 -80 VCER Collector-Emitter Voltage(RBE= 1kΩ) BD234 -45 BD236 -60 V BD238 -100 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak -6 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range -0.5 A 25 W 150 ℃ -65~150 ℃ isc website： 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Power Transistor BD234/236/238 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resist...