Inchange Semiconductor BD243A
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | BD243A |
|---|---|
| Datasheet | BD243A Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●DC Current Gain -hFE =30(Min)@ IC= 0.3A●Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BD243; 60V(Min)- BD243A 80V(Min)- BD243B; 100V(Min)- BD243C
●Complement to Type BD244/A/B/C
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for use in general purpose power amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD243 55 BD243A 70 VCBO Collector-Base Voltage V BD243B 90 BD243C 110 BD243 45 VCEO Collector-Emitter Voltage BD243A 60 V BD243B 80 BD243C 100 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 10 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 65 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case isc website： MAX UNIT 1.92 ℃/W 1 isc & iscsemi is registered trademark isc Silicon NPN Powe...