Inchange Semiconductor BD244
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | BD244 |
|---|---|
| Datasheet | BD244 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | PNP Transistor |
| Buy | Stock & Price |
DESCRIPTION
●DC Current Gain -hFE =30(Min)@ IC= -0.3A●Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BD243; -60V(Min)- BD243A -80V(Min)- BD243B; -100V(Min)- BD243C
●Complement to Type BD243/A/B/C
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for use in general purpose power amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD244 -45 BD244A -60 VCBO Collector-Base Voltage V BD244B -80 BD244C -100 BD244 -45 VCEO Collector-Emitter Voltage BD244A -60 V BD244B -80 BD244C -100 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6.0 A ICM Collector Current-Peak -10 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -2.0 A 65 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.92 ℃/W isc website： 1 isc & iscsemi is registered trademark...