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BD250 - PNP Transistor

General Description

Collector Current -IC= -25A Collector-Emitter Breakdown Voltage- : V(BR)CEO = -45V(Min)- BD250; -60V(Min)- BD250A -80V(Min)- BD250B; -100V(Min)- BD250C Complement to Type BD249/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector Current -IC= -25A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -45V(Min)- BD250; -60V(Min)- BD250A -80V(Min)- BD250B; -100V(Min)- BD250C ·Complement to Type BD249/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BD250 -55 VCER Collector-Emitter Voltage (RBE= 100Ω) BD250A BD250B -70 -90 BD250C -115 BD250 -45 VCEO Collector-Emitter Voltage BD250A -60 BD250B -80 BD250C -100 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -25 ICM Collector Current-Peak -40 IB Base Current -5 Collector Power Dissipat