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BD286 - PNP Transistor

General Description

Collector-Emitter Sustaining Voltage - : VCEO(SUS)= -45V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= -0.6V(Max)@ IC = -2A 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium pow

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isc Silicon PNP Power Transistor INCHANGE Semiconductor BD286 DESCRIPTION ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= -45V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= -0.6V(Max)@ IC = -2A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power linear and switching applications.