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BD301 - NPN Transistor

General Description

DC Current Gain - : hFE =30(Min.)@ IC= 3A Collector-Emitter Breakdown Voltage- : V(BR)CEO= 45V(Min.) Complement to Type BD302 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages up to 25W, vertical

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isc Silicon NPN Power Transistor BD301 DESCRIPTION ·DC Current Gain - : hFE =30(Min.)@ IC= 3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 45V(Min.) ·Complement to Type BD302 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages up to 25W, vertical deflection circuits in color TV receivers.