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BD343 - PNP Transistor

General Description

Excellent Safe Operating Area High DC Current Gain- : hFE=15-100(Min)@IC= -8A Low Saturation Voltage- : VCE(sat)= -1.0V(Max)@ IC = -8.0A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier and swit

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isc Silicon PNP Power Transistor INCHANGE Semiconductor BD343 DESCRIPTION ·Excellent Safe Operating Area ·High DC Current Gain- : hFE=15-100(Min)@IC= -8A ·Low Saturation Voltage- : VCE(sat)= -1.0V(Max)@ IC = -8.