BD343 Description
·Excellent Safe Operating Area ·High DC Current Gain- : hFE=15-100(Min)@IC= -8A ·Low Saturation Voltage- : 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER INCHANGE Semiconductor BD343 CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA;.