BD347 - NPN Transistor

Datasheet Summary

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC = 3A Good Linearity of hFE

and reliable operation.

Designed for RF power and ge

INCHANGE

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Datasheet Details

Part number	BD347
Manufacturer	INCHANGE
File Size	180.89 KB
Description	NPN Transistor
Datasheet	BD347 Datasheet
Additional preview pages of the BD347 datasheet.

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Full PDF Text Transcription

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isc Silicon NPN Power Transistor INCHANGE Semiconductor BD347 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC = 3A ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.

Published: Sep 30, 2020 |