Datasheet Details
| Part number | BD439 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.01 KB |
| Description | NPN Transistor |
| Download | BD439 Download (PDF) |
|
|
| Part number | BD439 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.01 KB |
| Description | NPN Transistor |
| Download | BD439 Download (PDF) |
|
|
|
·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= 60V(Min) ·Complement to type BD440 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCES Collector-Emitter Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Pulse 7 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 36 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor BD439 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A;
isc Silicon NPN Power Transistor INCHANGE Semiconductor BD439.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BD439 | COMPLEMENTARY SILICON POWER TRANSISTORS | STMicroelectronics |
 |
BD439 | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
 |
BD439 | POWER TRANSISTORS | TRANSYS Electronics |
 |
BD439 | SILICON POWER TRANSISTOR | SavantIC |
 |
BD439 | Plastic Encapsulate Transistors | SeCoS |
| Part Number | Description |
|---|---|
| BD434 | PNP Transistor |
| BD437 | NPN Transistor |
| BD438 | PNP Transistor |
| BD440 | PNP Transistor |
| BD441 | NPN Transistor |
| BD442 | PNP Transistor |