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BD501B

BD501B is Silicon NPN Power Transistors manufactured by Inchange Semiconductor.
BD501B datasheet preview

BD501B Datasheet

Part number BD501B
Download BD501B Datasheet (PDF)
File Size 191.44 KB
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistors
BD501B page 2

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BD501B Description

·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 50V(Min) 80V(Min) ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high power audio amplifiers utilizing plementary or quasi plementary circuits. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors TC=25℃ unless otherwise specified SYMBOL PARAMETER...

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