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BD501B - Silicon NPN Power Transistors

Download the BD501B datasheet PDF. This datasheet also covers the BD501 variant, as both devices belong to the same silicon npn power transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 50V(Min) 80V(Min) High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high power audio amplifiers utilizing complementary or quasi complement

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Note: The manufacturer provides a single datasheet file (BD501-INCHANGE.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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isc Silicon NPN Power Transistors BD501/B DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 50V(Min) 80V(Min) ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.