Inchange Semiconductor BD545
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | BD545 |
|---|---|
| Datasheet | BD545 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector Current -IC= 15A●Collector-Emitter Breakdown Voltage- : V(BR)CEO = 40V(Min)- BD545; 60V(Min)- BD545A 80V(Min)- BD545B; 100V(Min)- BD545C
●Complement to Type BD546/A/B/C
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for use in general purpose power amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD545 40 BD545A 60 VCBO Collector-Base Voltage V BD545B 80 BD545C 100 BD545 40 VCEO Collector-Emitter Voltage BD545A 60 V BD545B 80 BD545C 100 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous Collector Power Dissipation PC @ Ta=25℃ Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 15 A 3.5 W 85 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.47 ℃/W Rth j-c Thermal Resistance,Junction to Ambient 35.7 ℃/W isc website： 1 isc & iscsemi is registered...