BD582 Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·plement to Type BD581 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifier and switching applications. 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors INCHANGE Semiconductor BD582 TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS)...