| Part number | BD652 |
|---|---|
| Datasheet | BD652 Datasheet PDF (Download) |
| File Size | 190.60 KB |
| Manufacturer | Inchange Semiconductor |
| Description | PNP Transistor |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High DC Current Gain : 70 ℃/W 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor BD652 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BD652 | PNP SILICON POWER DARLINGTONS | Bourns Electronic Solutions |
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BD652 | SILICON POWER TRANSISTOR | SavantIC |
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BD652 | Power Transistor | Comset Semiconductors |
