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BD652 - PNP Transistor

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Part number BD652
Manufacturer INCHANGE
File Size 190.60 KB
Description PNP Transistor
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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) High DC Current Gain : hFE= 750(Min) @IC= -3A Low Saturation Voltage Complement to Type BD651 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V

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