BD702 - PNP Transistor

Inchange Semiconductor

General Description

Collector Emitter Sustaining Voltage : VCEO(SUS) = -100V(Min.) DC Current Gain : hFE = 750(Min) @ IC= -3A 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for output devi

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Datasheet Details

Part number	BD702
Manufacturer	Inchange Semiconductor
File Size	196.58 KB
Description	PNP Transistor
Datasheet	BD702 Datasheet

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INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor BD702 DESCRIPTION ·Collector–Emitter Sustaining Voltage— : VCEO(SUS) = -100V(Min.) ·DC Current Gain— : hFE = 750(Min) @ IC= -3A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for output devices in complementary general-purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -100 VCEO Collector-Emitter Voltage -100 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -8 IB Base Current -0.