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BD712 - PNP Transistor

General Description

DC Current Gain - : hFE = 40(Min.)@ IC= -0.5A Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100V(Min.) Complement to Type BD711 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power linear and switchin

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isc Silicon PNP Power Transistor BD712 DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= -0.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100V(Min.) ·Complement to Type BD711 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power linear and switching applications.