Inchange Semiconductor BD724
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | BD724 |
|---|---|
| Datasheet | BD724 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | PNP Transistor |
| Buy | Stock & Price |
DESCRIPTION
●DC Current Gain- : hFE= 40@ IC= -0.5A●Collector-Emitter Breakdown Voltage - : V(BR)CEO= -100V(Min)
●Complement to type BD723
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for use in audio output and general purpose amplifier applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -100 VCEO Collector-Emitter Voltage -100 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -4 ICM Collector Current-Peak -7 IB Base Current-Continuous -1 PC Collector Power Dissipation @ TC=25℃ 36 TJ Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.5 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 100 ℃/W BD724 isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise spec...