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BD746C Datasheet PNP Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon PNP Power Transistor.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

·Collector Current -IC= -20A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -45V(Min)- BD746;

-60V(Min)- BD746A -80V(Min)- BD746B;

-100V(Min)- BD746C ·Complement to Type BD745/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD746 -50 VCER Collector-Emitter Voltage (RBE= 100Ω) BD746A BD746B -70 -90 V BD746C -110 BD746 -45 VCEO Collector-Emitter Voltage BD746A -60 V BD746B -80 BD746C -100 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -20 A ICM Collector Current-Peak -25 A IB Base Current Collector Power Dissipation PC @ Ta=25℃ Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -7 A 3.5 W 115 150 ℃ Tstg Storage Temperature Range -65~150 ℃ BD746/A/B/C isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor BD746/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.

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