BD827 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain ·Low Saturation Voltage ·plement to Type BD828 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for driver-stages in hi-fi amplifiers and television circuits. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor BD827 TC=25℃ unless...