Download BD905 Datasheet PDF
Inchange Semiconductor
BD905
BD905 is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION - DC Current Gain - : h FE = 40(Min.)@ IC= 0.5A - Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 45V(Min) - plement to Type BD906 - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation @ TC=25℃ Junction Temperature Tstg Storage Temperature Range -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to...