Inchange Semiconductor BD939
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | BD939 |
|---|---|
| Datasheet | BD939 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●DC Current Gain- : hFE= 40(Min)@ IC= 150mA●Complement to Type BD934/936/938/940/942
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for use in output stages of audio and television amplifier circuits where high peak powers can occur.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE BD933 45 BD935 60 VCBO Collector-Base Voltage BD937 100 BD939 120 BD941 140 BD933 45 VCEO Collector-Emitter Voltage BD935 60 BD937 80 BD939 100 BD941 120 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 3 ICM Collector Current-Peak 7 IB Base Current-Continuous 0.5 PC Collector Power Dissipation @ TC=25℃ 30 TJ Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient MAX 4.17 70 UNIT ℃/W ℃/W isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Po...