Description
DC Current Gain -hFE = 40(Min)@ IC= -0.4A - Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min)- BDT30F; -60V(Min)- BDT30AF -80V(Min)- BDT30BF; -100V(Min)- BDT30CF -120V(Min)- BDT30DF - plement to Type BDT29F/AF/BF/CF/DF - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for use in audio output stages , general purpose amplifier and high speed switching applications SYMBOL PARAMETER VALUE UNIT BDT30F -80 VCBO Collector-Base Voltage BDT30AF -100 BDT30BF -120 V BDT30CF -140 BDT30DF -160 BDT30F -40 VCEO Collector-Emitter Voltage BDT30AF -60 BDT30BF -80 V BDT30CF -100 BDT30DF -120 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1 A ICM Collector Current-Peak -3 A IB Base Current PC Collector Power Dissipation TC=25℃ Tj Junction Temperature -0.4 A 19 W 150 ℃ Tstg Storage Ttemperature Range -65~150 ℃ SYMBOL PARAMETER Rth j-c Rth j-a MAX 9.17 55 UNIT ℃/W ℃/W isc website：.iscsemi. 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors BDT30F/AF/BF/CF/DF TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT30F VCEO(SUS) Collector-Emitter Sustaining Voltage BDT30AF BDT30BF BDT30CF IC= -30mA; IB= 0 BDT30DF VCE(sat) VBE(on) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.125A Base-Emitter On Voltage IC= -1A ; VCE= -4V ICES Collector Cutoff Current VCE= VCEOmax; VBE= 0 ICEO Collector Cutoff Current BDT30F/AF VCE= -30V; IB= 0 BDT30BF/CF VCE= -60V; IB= 0 BDT30DF VCE= -90V; IB= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -0.2A ; VCE= -4V hFE-2 DC Current Gain IC= -1A ; VCE= -4V fT Current-Gain-Bandwidth Product IC= -0.2A ; VCE= -10V Switching Times ton Turn-On Time toff Turn-Off Time IC= -1.0A; IB1= -IB2= -0.1A MIN TYP.
