| Part number | BDT62 |
|---|---|
| Datasheet | BDT62-INCHANGE.pdf |
| File Size | 216.74 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon PNP Darlington Power Transistors |
|
|
·DC Current Gain -hFE = 1000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT62; MAX UNIT 1.39 ℃/W 70 ℃/W 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistors TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT62 V(BR)CEO Collector-Emitter Breakdown Voltage BDT62A BDT62B IC= -30mA;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
BDT62 | Silicon Darlington Power Transistors | MAGNA TEC |
|
BDT62A | Silicon Darlington Power Transistors | MAGNA TEC |
|
BDT62B | Silicon Darlington Power Transistors | MAGNA TEC |
|
BDT62C | Silicon Darlington Power Transistors | MAGNA TEC |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| BDT62A | Silicon PNP Darlington Power Transistors |
| BDT62B | Silicon PNP Darlington Power Transistors |
| BDT62C | Silicon PNP Darlington Power Transistors |
| BDT62F | PNP Transistor |
| BDT60AF | PNP Transistor |
| BDT60BF | PNP Transistor |
| BDT60CF | PNP Transistor |
| BDT60F | PNP Transistor |
| BDT61 | NPN Transistor |
| BDT61A | NPN Transistor |
