Datasheet4U Logo Datasheet4U.com

BDT65AF - NPN Transistor

This page provides the datasheet information for the BDT65AF, a member of the BDT65F NPN Transistor family.

Datasheet Summary

Description

Collector Current -IC= 12A High DC Current Gain-hFE= 1000(Min)@ IC= 5A Complement to Type BDT64F/AF/BF/CF Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general purpose amplifier applicatio

📥 Download Datasheet

Datasheet preview – BDT65AF

Datasheet Details

Part number BDT65AF
Manufacturer INCHANGE
File Size 214.43 KB
Description NPN Transistor
Datasheet download datasheet BDT65AF Datasheet
Additional preview pages of the BDT65AF datasheet.

📁 Similar Datasheet

  • BDT65A - SILICON DARLINGTON POWER TRANSISTORS (Comset Semiconductors)
  • BDT65 - SILICON DARLINGTON POWER TRANSISTORS (Comset Semiconductors)
  • BDT65B - SILICON DARLINGTON POWER TRANSISTORS (Comset Semiconductors)
  • BDT65C - SILICON POWER TRANSISTOR (SavantIC)
  • BDT65C - SILICON DARLINGTON POWER TRANSISTORS (Comset Semiconductors)
  • BDT60 - PNP Transistor (Power Innovations Limited)
  • BDT60 - PNP SILICON POWER DARLINGTONS (New Jersey Semi-Conductor)
  • BDT60 - Silicon PNP Power Transistor (Inchange Semiconductor)
  • BDT60A - PNP Transistor (Power Innovations Limited)
  • BDT60A - PNP SILICON POWER DARLINGTONS (New Jersey Semi-Conductor)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector Current -IC= 12A ·High DC Current Gain-hFE= 1000(Min)@ IC= 5A ·Complement to Type BDT64F/AF/BF/CF ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDT65F 60 VCER Collector-Emitter Voltage BDT65AF 80 BDT65BF 100 V BDT65CF 120 BDT65F 60 VCEO Collector-Emitter Voltage BDT65AF 80 BDT65BF 100 V BDT65CF 120 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak 20 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.
Published: |