Inchange Semiconductor BDT88
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | BDT88 |
|---|---|
| Datasheet | BDT88 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon PNP Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●DC Current Gain -hFE = 40(Min)@ IC= -5A●Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT82; -80V(Min)- BDT84; -100V(Min)- BDT86; -120V(Min)- BDT88
●Complement to Type BDT81/83/85/87
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for use in audio output stages and general amplifer and switching applicationsABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE BDT82 -60 VCBO Collector-Base Voltage BDT84 BDT86 -80 -100 BDT88 -120 BDT82 -60 VCEO BDT84 Collector-Emitter Voltage BDT86 -80 -100 BDT88 -120 VEBO Emitter-Base Voltage -7 IC Collector Current-Continuous -15 ICM Collector Current-Peak -20 IB Base Current -4 PC Collector Power Dissipation TC=25℃ 125 Tj Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient MAX 1 70 UNIT ℃/W ℃/W...