Inchange Semiconductor BDT91F
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | BDT91F |
|---|---|
| Datasheet | BDT91F Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●DC Current Gain- hFE= 20~200@ IC= 4A●Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min)- BDT91F; 80V(Min)- BDT93F; 100V(Min)- BDT95F
●Complement to Type BDT92F/94F/96F
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for use in audio output stages and general amplifier and switching applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE BDT91F 60 VCBO Collector-Base Voltage BDT93F 80 BDT95F 100 VCEO Collector-Emitter Voltage BDT91F 60 BDT93F 80 BDT95F 100 VEBO Emitter-Base Voltage 7 IC Collector Current-Continuous 10 ICM Collector Current-Peak 20 IB Base Current-Continuous 4 PC Collector Power Dissipation @ TC=25℃ 32 TJ Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 6.4 ℃/W BDT91F/93F/95F isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Po...