• Part: BDV64B
  • Manufacturer: Inchange Semiconductor
  • Size: 216.00 KB
Download BDV64B Datasheet PDF
BDV64B page 2
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BDV64B Description

·Collector Current -IC= -12A ·Collector-Emitter Saturation Voltage- : 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c ,Junction to Case Rth j-a ,Junction to Ambient MAX UNIT 1.0 ℃/W 35.7 ℃/W TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDV64 V(BR)CEO Collector-Emitter Breakdown Voltage BDV64A BDV64B IC= -30mA; IB= 0...