BDW53 Description
hFE= 750(Min.)@ IC= 1.5A, VCE= 3V ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min) ·Low Collector Saturation Voltage ·plement to Type BDW54 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor...