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BDW53

Manufacturer: Inchange Semiconductor

BDW53 datasheet by Inchange Semiconductor.

BDW53 datasheet preview

BDW53 Datasheet Details

Part number BDW53
Datasheet BDW53-INCHANGE.pdf
File Size 198.28 KB
Manufacturer Inchange Semiconductor
Description NPN Transistor
BDW53 page 2

BDW53 Overview

hFE= 750(Min.)@ IC= 1.5A, VCE= 3V ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min) ·Low Collector Saturation Voltage ·plement to Type BDW54 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor...

BDW53 from other manufacturers

View BDW53 datasheet index

Brand Logo Part Number Description Other Manufacturers
Power Innovations Limited Logo BDW53 NPN Transistor Power Innovations Limited
Power Innovations Limited Logo BDW53A NPN Transistor Power Innovations Limited
Power Innovations Limited Logo BDW53B NPN Transistor Power Innovations Limited
Power Innovations Limited Logo BDW53C NPN Transistor Power Innovations Limited
Power Innovations Limited Logo BDW53D NPN Transistor Power Innovations Limited
Inchange Semiconductor logo - Manufacturer

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