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BDW53 - NPN Transistor

General Description

High DC Current Gain : hFE= 750(Min.)@ IC= 1.5A, VCE= 3V High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min) Low Collector Saturation Voltage Complement to Type BDW54 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

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Part Number Description Manufacturer
BDW53 NPN Transistor Power Innovations Limited
BDW53A NPN Transistor Power Innovations Limited
BDW53B NPN Transistor Power Innovations Limited
BDW53C NPN Transistor Power Innovations Limited
BDW53D NPN Transistor Power Innovations Limited

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isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BDW53 DESCRIPTION ·High DC Current Gain : hFE= 750(Min.)@ IC= 1.5A, VCE= 3V ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min) ·Low Collector Saturation Voltage ·Complement to Type BDW54 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.