High DC Current Gain : hFE= 750(Min.)@ IC= -1.5A, VCE= -3V - High Collector-Emitter Breakdown Voltage- : V(BR)CEO = -45V(Min) - Low Collector Saturation Voltage - plement to Type BDW53 - Minimum Lot-to-Lot variations for robust device performance and reliable operation.
| Part Number | Manufacturer | Description |
|---|---|---|
| BDW54A | Power Innovations Limited | PNP SILICON POWER DARLINGTONS |
| BDW54 | Power Innovations Limited | PNP SILICON POWER DARLINGTONS |
| BDW54B | Power Innovations Limited | PNP SILICON POWER DARLINGTONS |
| BDW54C | Power Innovations Limited | PNP SILICON POWER DARLINGTONS |
| BDW54D | Power Innovations Limited | PNP SILICON POWER DARLINGTONS |
| BDW51C | Seme LAB | Bipolar NPN Device |
| BDW52A | Seme LAB | Bipolar PNP Device |
| BDW53A | Power Innovations Limited | NPN Transistor |
| BDW51A | Seme LAB | Bipolar NPN Device |
| BDW51B | Seme LAB | Bipolar NPN Device |
