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BDW54 - PNP Transistor

General Description

High DC Current Gain : hFE= 750(Min.)@ IC= -1.5A, VCE= -3V High Collector-Emitter Breakdown Voltage- : V(BR)CEO = -45V(Min) Low Collector Saturation Voltage Complement to Type BDW53 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATI

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Part Number Description Manufacturer
BDW54 PNP SILICON POWER DARLINGTONS Power Innovations Limited
BDW54A PNP SILICON POWER DARLINGTONS Power Innovations Limited
BDW54B PNP SILICON POWER DARLINGTONS Power Innovations Limited
BDW54C PNP SILICON POWER DARLINGTONS Power Innovations Limited
BDW54D PNP SILICON POWER DARLINGTONS Power Innovations Limited

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INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor BDW54 DESCRIPTION ·High DC Current Gain : hFE= 750(Min.)@ IC= -1.5A, VCE= -3V ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO = -45V(Min) ·Low Collector Saturation Voltage ·Complement to Type BDW53 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications.