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BDW74 - Silicon PNP Darlington Power Transistor

General Description

Collector Current -IC= -8A High DC Current Gain-hFE= 750(Min.)@ IC= -3A Complement to Type BDW73/A/B/C/D Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general amplifier and switching appl

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isc Silicon PNP Darlington Power Transistor BDW74/A/B/C/D DESCRIPTION ·Collector Current -IC= -8A ·High DC Current Gain-hFE= 750(Min.)@ IC= -3A ·Complement to Type BDW73/A/B/C/D ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDW74 -45 VCBO Collector-Base Voltage BDW74A BDW74B BDW74C -60 -80 -100 BDW74D -120 BDW74 -45 VCEO Collector-Emitter Voltage BDW74A BDW74B BDW74C -60 -80 -100 BDW74D -120 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -8 IB Base Current-Continuous -0.