| Part number | BDX35 |
|---|---|
| Download | BDX35 Datasheet (PDF) |
| File Size | 207.62 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
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| Manufacturer | Part Number | Description |
|---|---|---|
NXP Semiconductors |
BDX35 | NPN switching transistors |
SavantIC |
BDX35 | SILICON POWER TRANSISTOR |
Comset Semiconductors |
BDX35 | SILICON PLANAR EPITAXIAL POWER TRANSISTOR |
··High Current Capability-IC= 5A(DC) ·DC Current Gain : hFE = 45-450(Min) @ IC= 0.5 A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High-current switching in power applications.
