Inchange Semiconductor BDX36
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | BDX36 |
|---|---|
| Datasheet | BDX36 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Current Capability-IC= 5A(DC)●DC Current Gain— : hFE = 45-450(Min) @ IC= 0.5 A
●Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.)
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●High-current switching in power applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IBM Base Current-Peak Collector Power Dissipation PC Ta=25℃ Collector Power Dissipation TC≤ 75℃ Ti Junction Temperature 2 A 1.25 W 15 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 5 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 100 ℃/W isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BDX36ELECTRICAL CHARACTERISTICS
TC =25℃ unles...