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BDX41 - NPN Transistor

Datasheet Summary

Description

With TO-3 Package High Current Capability Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

applications.

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Datasheet Details

Part number BDX41
Manufacturer INCHANGE
File Size 197.32 KB
Description NPN Transistor
Datasheet download datasheet BDX41 Datasheet
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Full PDF Text Transcription

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isc Silicon NPN Power Transistor DESCRIPTION ·With TO-3 Package ·High Current Capability ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO VEBO IC Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous PC Collector Power Dissipation TJ Junction Temperature Tstg Storage Temperature Range 50 V 40 V 7 V 16 A 20 A 5 A 150 W 150 ℃ -55~150 ℃ BDX41 isc website：www.iscsemi.
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