Inchange Semiconductor BDX62
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | BDX62 |
|---|---|
| Datasheet | BDX62 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon PNP Darlington Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector Current -IC= -8A●High DC Current Gain-hFE= 1000(Min)@ IC= -3A
●Complement to Type BDX63/A/B/C
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for audio output stages and general amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDX62 -80 VCBO Collector-Base Voltage BDX62A -100 V BDX62B -120 BDX62C -140 BDX62 -60 VCEO Collector-Emitter Voltage BDX62A -80 V BDX62B -100 BDX62C -120 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak -12 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.15 A 90 W 200 ℃ Tstg Storage Temperature Range -55~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.94 ℃/W BDX62/A/B/C isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor BDX62/A/B/CELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.