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BDX77 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO = 80V(Min) Complement to Type BDX78 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

of 15 to 15 W into a 4Ωor 8Ωload.

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Full PDF Text Transcription for BDX77 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BDX77. For precise diagrams, and layout, please refer to the original PDF.

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 80V(Min) ·Complement to Type BDX78 ·Minimum Lot-to-Lot variations for robu...

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Min) ·Complement to Type BDX78 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in hi-fi equipment delivering an output of 15 to 15 W into a 4Ωor 8Ωload.