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BDX77. For precise diagrams, and layout, please refer to the original PDF.
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 80V(Min) ·Complement to Type BDX78 ·Minimum Lot-to-Lot variations for robu...
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Min) ·Complement to Type BDX78 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in hi-fi equipment delivering an output of 15 to 15 W into a 4Ωor 8Ωload.