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BDX77F - NPN Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO = 80V(Min) Complement to Type BDX78F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

of 15 to 15 W into a 4Ωor 8Ωload.

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Datasheet Details

Part number BDX77F
Manufacturer INCHANGE
File Size 210.17 KB
Description NPN Transistor
Datasheet download datasheet BDX77F Datasheet
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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 80V(Min) ·Complement to Type BDX78F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in hi-fi equipment delivering an output of 15 to 15 W into a 4Ωor 8Ωload.
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