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BDX83A Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Darlington Power Transistor BDX83/A/B/C.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

·High DC Current Gain- : hFE= 1000(Min)@ IC= 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BDX83;

60V(Min)- BDX83A 80V(Min)- BDX83B;

100V(Min)- BDX83C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power switching ·Hammer drivers ·Series and shunt regulators ·Audio amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDX83 45 BDX83A 60 VCBO Collector-Base Voltage BDX83B 80 BDX83C 100 BDX83 45 VCEO Collector-Emitter Voltage BDX83A 60 BDX83B 80 BDX83C 100 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 10 ICM Collector Current-Peak 15 IB Base Current 250 PC Collector Power Dissipation @ TC=25℃ 125 TJ Junction Temperature 200 Tstg Storage Temperature Range -65~200 UNIT V V V A A mA W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case isc website:.iscsemi.

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