Datasheet Details
| Part number | BDX84B |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.67 KB |
| Description | PNP Transistor |
| Datasheet | BDX84B BDX84 Datasheet (PDF) |
|
|
Overview: isc Silicon PNP Darlington Power Transistor BDX84/A/B/C.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | BDX84B |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.67 KB |
| Description | PNP Transistor |
| Datasheet | BDX84B BDX84 Datasheet (PDF) |
|
|
|
·High DC Current Gain- : hFE= 1000(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BDX84;
-60V(Min)- BDX84A -80V(Min)- BDX84B;
-100V(Min)- BDX84C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power switching ·Hammer drivers ·Series and shunt regulators ·Audio amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDX84 -45 BDX84A -60 VCBO Collector-Base Voltage BDX84B -80 BDX84C -100 BDX84 -45 VCEO Collector-Emitter Voltage BDX84A -60 BDX84B -80 BDX84C -100 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -10 ICM Collector Current-Peak -15 IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -250 125 200 Tstg Storage Temperature Range -65~200 UNIT V V V A A mA W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case isc website：.iscsemi.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BDX84C | Bipolar PNP Device | Seme LAB |
| Part Number | Description |
|---|---|
| BDX84 | PNP Transistor |
| BDX84A | PNP Transistor |
| BDX84C | PNP Transistor |
| BDX83 | NPN Transistor |
| BDX83A | NPN Transistor |
| BDX83B | NPN Transistor |
| BDX83C | NPN Transistor |
| BDX86 | PNP Transistor |
| BDX86A | PNP Transistor |
| BDX86B | PNP Transistor |