High DC Current Gain-
: hFE= 750(Min)@ IC= 6A
Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 100V(Min)
Complement to Type BDX88C
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for use in power linear and switchi
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isc Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
BDX87C
DESCRIPTION ·High DC Current Gain-
: hFE= 750(Min)@ IC= 6A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 100V(Min) ·Complement to Type BDX88C ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in power linear and switching applications.