Datasheet4U Logo Datasheet4U.com

BDY29 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 75V (Min) Low Collector-Emitter Saturation Voltage Excellent Safe Operating Area Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high power ,high current and

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BDY29 HIGH POWER HIGH CURRENT TRANSISTOR ETC
BDY20 Bipolar NPN Device Seme LAB
BDY20 Silicon NPN Power Transistor Inchange Semiconductor
BDY23 (BDY23 - BDY25)NPN SILICON TRANSISTORS Comset Semiconductor
BDY23 Bipolar NPN Device Seme LAB

Other Datasheets by Inchange Semiconductor

Part Number Description
BDY25 NPN Transistor
BDY26 NPN Transistor
BDY27 NPN Transistor
BDY28 NPN Transistor
BDY37 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 75V (Min) ·Low Collector-Emitter Saturation Voltage ·Excellent Safe Operating Area ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high power ,high current and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 75 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 30 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 7.