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BDY47 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor BDY47.

General Description

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 350V(Min.) ·DC Current Gain- : hFE=20(Min.)@IC = 2A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC = 15A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Voltage regulator ·Inverter ·Switching mode power supply ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 750 V VCES Collector-Emitter Voltage 750 V VCEO Collector-Emitter Voltage 350 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 17 A IB Base Current 5 A PC Collector Power Dissipation@TC≤45℃ 95 W TJ Junction Temperature 175 ℃ Tstg Storage Temperature -65~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.37 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;

IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;

IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA;

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