BDY47 Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 350V(Min.) ·DC Current Gain- : hFE=20(Min.)@IC = 2A ·Collector-Emitter Saturation Voltage-.
BDY47 datasheet PDF for NPN Transistor.
| Part number | BDY47 |
|---|---|
| Datasheet | BDY47-INCHANGE.pdf |
| File Size | 203.62 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 350V(Min.) ·DC Current Gain- : hFE=20(Min.)@IC = 2A ·Collector-Emitter Saturation Voltage-.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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BDY47 | Bipolar NPN Device | Seme LAB |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| BDY42 | NPN Transistor |
| BDY43 | NPN Transistor |
| BDY44 | NPN Transistor |
| BDY45 | NPN Transistor |
| BDY46 | Silicon NPN Power Transistor |
| BDY48 | NPN Transistor |
| BDY49 | NPN Transistor |
| BDY25 | NPN Transistor |
| BDY26 | NPN Transistor |
| BDY27 | NPN Transistor |