Inchange Semiconductor BDY53
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | BDY53 |
|---|---|
| Datasheet | BDY53 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Sustaining Voltage- : VCEO(SUS)=60V(Min.)●Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A
●High Switching Speed
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for general-purpose switching and amplifier applicationsABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 12 A IB Base Current 5 A PC Collector Power Dissipation@TC=25℃ 60 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ BDY53 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors BDY53ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 60 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A 1.1 V...