Datasheet Details
| Part number | BDY62 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 196.84 KB |
| Description | NPN Transistor |
| Datasheet | BDY62-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | BDY62 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 196.84 KB |
| Description | NPN Transistor |
| Datasheet | BDY62-INCHANGE.pdf |
|
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V (Min) ·Low Collector-Emitter Saturation Voltage ·Excellent Safe Operating Area ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 8 A IB Base Current-Continuous 3 A PC Collector Power Dissipation @TC=25℃ 50 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ BDY62 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BDY62 | Bipolar NPN Device | Seme LAB |
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